BAW56TT1 Datasheet, PDF (1/4 Pages) ON Semiconductor – Dual Switching Diode

BAW56TT1
Preferred Device
Dual Switching Diode
Features
• Pb−Free Package is Available
MAXIMUM RATINGS (T_A = 25°C)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR−4 Board (Note 1), T_A = 25°C
Derated above 25°C
Symbol
V_R
I_F
I_FM(surge)
Max
70
200
500
Unit
Vdc
mAdc
mAdc
Symbol
P_D
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
R_θJA
555
°C/W
Total Device Dissipation,
FR−4 Board (Note 2), T_A = 25°C
Derated above 25°C
P_D
360
mW
2.9
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
R_θJA
345
°C/W
Junction and Storage
Temperature Range
T_J, T_stg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 2
http://onsemi.com
3
ANODE
CATHODE
1
2
CATHODE
1
CASE 463
SC−75/SOT−416
STYLE 4
MARKING DIAGRAM
A1 M G
G
1
A1 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
BAW56TT1 SC−75/SOT−416 3000/Tape & Reel
BAW56TT1G ^{SC−75/SOT−416} 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
BAW56TT1/D