BAW56LT1G Datasheet, PDF (1/4 Pages) ON Semiconductor – Dual Switching Diode Common Anode

BAW56LT1G
Dual Switching Diode
Common Anode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value
Unit
Reverse Voltage
V_R
70
V
Forward Current
I_F
200
mA
Peak Forward Surge Current
I_FM(surge)
500
mA
Non−Repetitive Peak Forward Current
I_FSM
t = 1 ms (Note 3)
4
A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
P_D
(Note 1)
T_A = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
556
°C/W
Total Device Dissipation
Alumina Substrate,
(Note 2) T_A = 25°C
Derate above 25°C
P_D
300
mW
2.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
417
°C/W
Junction and Storage Temperature
T_J, T_stg
−55 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
3. Square Wave; T_j = 25°C.
http://onsemi.com
ANODE
3
CATHODE
1
2
CATHODE
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 12
MARKING DIAGRAM
A1 M G
G
1
A1
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
BAW56LT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
BAW56LT3G SOT−23 10,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 6
Publication Order Number:
BAW56LT1/D