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BAV74LT1G_16 Datasheet, PDF (1/3 Pages) ON Semiconductor – Monolithic Dual Switching Diode | |||
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BAV74LT1G
Monolithic Dual
Switching Diode
Features
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value
Unit
Reverse Voltage
VR
50
Vdc
Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FRâ 5 Board
PD
(Note 1), TA = 25°C
225
mW
Derate above 25°C
1.8
mW/°C
Thermal Resistance, JunctionâtoâAmbient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, JunctionâtoâAmbient RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg â55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FRâ 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
www.onsemi.com
3
CATHODE
ANODE
1
2
ANODE
3
1
2
SOTâ23 (TOâ236)
CASE 318
STYLE 9
MARKING DIAGRAM
JA M G
G
1
JA = Device Code
M = Date Code*
G = PbâFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
BAV74LT1G
Package
SOTâ23
(PbâFree)
Shippingâ
3000/Tape & Reel
BAV74LT3G
SOTâ23 10,000/Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
1
October, 2016 â Rev. 6
Publication Order Number:
BAV74LT1/D
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