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BAV70WT1 Datasheet, PDF (1/5 Pages) Motorola, Inc – CASE 419-02, STYLE 5 SC-70/SOT-323
BAV70WT1
Preferred Device
Dual Switching Diode
Common Cathode
Features
• Pb−Free Package is Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol Max Unit
Reverse Voltage
VR
70
V
Forward Current
IF
200
mA
Peak Forward Surge Current
IFM(surge) 500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect device
reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD
200
mW
1.6 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
625 °C/W
Total Device Dissipation
PD
300
mW
Alumina Substrate (Note 2) TA = 25°C
Derate above 25°C
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to
°C
+150
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
http://onsemi.com
3
CATHODE
ANODE
1
2
ANODE
MARKING
DIAGRAM
3
SOT−323
CASE 419
1
2
STYLE 5
3
A4 MG
G
1
2
A4 = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
BAV70WT1
BAV70WT1G
SOT−323
SOT−323
(Pb−Free)
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2007
1
January, 2007 − Rev. 4
Publication Order Number:
BAV70WT1/D