BAV70W Datasheet, PDF (1/5 Pages) NXP Semiconductors – High-speed double diode

BAV70W, SBAV70W
Dual Switching Diode
Common Cathode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol Max Unit
Reverse Voltage
V_R
100
V
Forward Current
I_F
200
mA
Peak Forward Surge Current
I_FM(surge) 500
mA
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation FR− 5 Board
(Note 1)
T_A = 25°C
Derate above 25°C
P_D
200
mW
1.6 mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
625 °C/W
Total Device Dissipation
P_D
300
mW
Alumina Substrate (Note 2) T_A = 25°C
Derate above 25°C
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
417 °C/W
Junction and Storage Temperature
T_J, T_stg − 55 to
°C
+150
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
www.onsemi.com
SOT−323
CASE 419
STYLE 5
3
CATHODE
ANODE
1
2
ANODE
MARKING DIAGRAM
3
A4 MG
G
1
2
A4 = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
BAV70WT1G
SOT−323 3,000 / Tape & Reel
(Pb−Free)
SBAV70WT1G SOT−323 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
1
April, 2015 − Rev. 8
Publication Order Number:
BAV70WT1/D