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| BAV70TT1G Datasheet, PDF (1/5 Pages) ON Semiconductor – Dual Switching Diode | |||
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BAV70TT1G
Dual Switching Diode
Features
ï· These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
MAXIMUM RATINGS (TA = 25ï°C)
Rating
Symbol
Max
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR--4 Board (Note 1)
TA = 25ï°C
Derated above 25ï°C
Thermal Resistance,
Junction to Ambient (Note 1)
PD
RθJA
225
mW
1.8
mW/ï°C
555
ï°C/W
Total Device Dissipation,
FR--4 Board (Note 2)
TA = 25ï°C
Derated above 25ï°C
Thermal Resistance,
Junction--to--Ambient (Note 2)
PD
RθJA
360
mW
2.9
mW/ï°C
345
ï°C/W
Junction and Storage
Temperature Range
TJ, Tstg
--55 to
ï°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR--4 @ Minimum Pad
2. FR--4 @ 1.0 ï´ 1.0 Inch Pad
3
CATHODE
ANODE
1
2
ANODE
3
CASE 463
SOT--416/SC--75
2
STYLE 3
1
MARKING
DIAGRAM
A4 MG
G
1
A4
= Specific Device Code
M
= Date Code
G
= Pb--Free Package
ORDERING INFORMATION
Device
Package
Shippingâ
BAV70TT1G
SOT--416 3000 / Tape & Reel
(Pb-Free)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ï£ Semiconductor Components Industries, LLC, 2010
1
October, 2010 -- Rev. 3
Publication Order Number:
BAV70TT1/D
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