BAV70TT1 Datasheet, PDF (1/6 Pages) ON Semiconductor – Dual Switching Diode

BAV70TT1
Preferred Device
Dual Switching Diode
Features
• Pb−Free Package May be Available.* The G−Suffix Denotes a
Pb−Free Lead Finish
MAXIMUM RATINGS (TA = 25°C)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR−4 Board ⁽¹⁾
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction to Ambient ⁽¹⁾
Total Device Dissipation,
FR−4 Board ⁽²⁾
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient ⁽²⁾
Junction and Storage
Temperature Range
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
Symbol
VR
IF
IFM(surge)
Symbol
PD
R_qJA
PD
R_qJA
TJ, Tstg
Max
70
200
500
Max
225
1.8
555
360
2.9
345
−55 to
+150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
http://onsemi.com
3
CATHODE
ANODE
1
2
ANODE
3
2
1
CASE 463
SOT−416/SC−75
STYLE 3
DEVICE MARKING
A4
ORDERING INFORMATION
Device
Package
Shipping^†
BAV70TT1
SOT−416 3000 / Tape & Reel
BAV70TT1G
SOT−416 3000 / Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2003
December, 2003 − Rev. 2
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
BAV70TT1/D