BAV70T Datasheet, PDF (1/5 Pages) NXP Semiconductors – High-speed double diode

BAV70T, NSVBAV70T
Dual Switching Diode
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Max
Unit
Reverse Voltage
V_R
100
Vdc
Forward Current
I_F
200
mAdc
Peak Forward Surge Current
I_FM(surge)
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR−4 Board (Note 1)
T_A = 25°C
Derated above 25°C
P_D
225
mW
1.8
mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
R_qJA
555
°C/W
Total Device Dissipation,
FR−4 Board (Note 2)
T_A = 25°C
Derated above 25°C
P_D
360
mW
2.9
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
R_qJA
345
°C/W
Junction and Storage
Temperature Range
T_J, T_stg
−55 to
°C
+150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
www.onsemi.com
3
CATHODE
ANODE
1
2
ANODE
3
CASE 463
SOT−416/SC−75
2
1
STYLE 3
MARKING
DIAGRAM
A4 MG
G
1
A4
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
ORDERING INFORMATION
Device
BAV70TT1G
Package
SOT−416
(Pb-Free)
Shipping^†
3000 / Tape &
Reel
NSVBAV70TT1G SOT−416
(Pb-Free)
3000 / Tape &
Reel
NSVBAV70TT3G SOT−416 10000 / Tape &
(Pb-Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
1
April, 2015 − Rev. 6
Publication Order Number:
BAV70TT1/D