BAV70LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – CASE 318-08, STYLE 9 SOT-23 (TO-236AB)

ON Semiconductort
Monolithic Dual Switching Diode
Common Cathode
BAV70LT1
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BAV70LT1 = A4
Symbol
VR
IF
IFM(surge)
Value
70
200
500
Symbol
PD
R_qJA
PD
R_qJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 µAdc)
V(BR)
Reverse Voltage Leakage Current (Note 3)
IR
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150°C)
Diode Capacitance
CD
(VR = 0, f = 1.0 MHz)
Forward Voltage
VF
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
RL = 100 Ω
trr
(IF = IR = 10 mAdc, VR = 5.0 Vdc, IR(REC) = 1.0 mAdc) (Figure 1)
1. FR–5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
3. For each individual diode while second diode is unbiased.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
3
1
2
CASE 318–08, STYLE 9
SOT–23 (TO–236AB)
3
CATHODE
ANODE
1
2
ANODE
Min
Max
Unit
70
—
Vdc
µAdc
—
60
—
2.5
—
100
—
1.5
pF
mVdc
—
715
—
855
—
1000
—
1250
—
6.0
ns
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 2
Publication Order Number:
BAV70LT1/D