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BAV70DXV6T1 Datasheet, PDF (1/8 Pages) ON Semiconductor – Monolithic Dual Switching Diode Common Cathode
BAV70DXV6T1,
BAV70DXV6T5
Preferred Device
Monolithic Dual Switching
Diode Common Cathode
Features
• These are Pb−Free Devices
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol
VR
IF
IFM(surge)
Symbol
PD
Thermal Resistance, Junction-to-Ambient RqJA
Characteristic
(Both Junctions Heated)
Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance, Junction-to-Ambient RqJA
Junction and Storage
Temperature Range
TJ, Tstg
Value
70
200
500
Max
357
(Note 1)
2.9
(Note 1)
350
(Note 1)
Max
500
(Note 1)
4.0
(Note 1)
250
(Note 1)
−55 to
+150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
http://onsemi.com
6
CATHODE
5
ANODE
4
ANODE
ANODE
1
2
ANODE
3
CATHODE
BAV70DXV6T1
SOT−563
CASE 463A
PLASTIC
1
MARKING DIAGRAM
A4 M G
G
1
A4 = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
BAV70DXV6T1 SOT−563* 4000/Tape & Reel
BAV70DXV6T1G SOT−563* 4000/Tape & Reel
BAV70DXV6T5 SOT−563* 8000/Tape & Reel
BAV70DXV6T5G SOT−563* 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*These packages are inherently Pb−Free.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 2
Publication Order Number:
BAV70DXV6T1/D