BAV70DXV6 Datasheet, PDF (1/4 Pages) ON Semiconductor – Monolithic Dual Switching Diode Common Cathode

BAV70DXV6,
NSVBAV70DXV6
Monolithic Dual Switching
Diode Common Cathode
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value
Unit
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
V_R
100
I_F
200
I_FM(surge)
500
Vdc
mAdc
mAdc
Characteristic
(One Junction Heated)
Symbol Max
Unit
Total Device Dissipation, T_A = 25°C
Derate above 25°C
P_D
357
mW
(Note 1)
2.9
mW/°C
(Note 1)
Thermal Resistance, Junction-to-Ambient
R_qJA
350
°C/W
(Note 1)
Characteristic
(Both Junctions Heated)
Symbol Max
Unit
Total Device Dissipation, T_A = 25°C
Derate above 25°C
P_D
500
mW
(Note 1)
4.0
mW/°C
(Note 1)
Thermal Resistance, Junction-to-Ambient
R_qJA
250
°C/W
(Note 1)
Junction and Storage
Temperature Range
T_J, T_stg − 55 to
°C
+150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
www.onsemi.com
6
CATHODE
5
ANODE
4
ANODE
ANODE
1
2
ANODE
3
CATHODE
BAV70DXV6T1
SOT−563
CASE 463A
1
MARKING DIAGRAM
A4 M G
G
1
A4 = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping^†
BAV70DXV6T5G
SOT−563 8000 / Tape &
(Pb−Free)
Reel
NSVBAV70DXV6T5G SOT−563 8000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
1
April, 2015 − Rev. 6
Publication Order Number:
BAV70DXV6T1/D