BAS70LT1G Datasheet, PDF (1/3 Pages) ON Semiconductor – Schottky Barrier Diodes

BAS70LT1G,
NSVBAS70LT1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_J = 150°C unless otherwise noted)
Rating
Symbol
Value
Unit
Forward Current
I_F
70
mA
Non−Repetitive Peak Forward Surge
I_FSM
100
mA
Current (t ≤ 1.0 s)
Reverse Voltage
Forward Power Dissipation
@ T_A = 25°C
Derate above 25°C
V_R
70
V
P_F
225
mW
1.8
mW/°C
Operating Junction and Storage
Temperature Range
T_J, T_stg − 55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
70 VOLTS SCHOTTKY
BARRIER DIODES
SOT−23 (TO−236)
CASE 318
STYLE 8
3
CATHODE
1
ANODE
MARKING DIAGRAM
BE M G
G
1
BE Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
BAS70LT1G
NSVBAS70LT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping^†
3,000 /
Tape & Reel
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1997
1
October, 2016 − Rev. 10
Publication Order Number:
BAS70LT1/D