BAS40L Datasheet, PDF (1/3 Pages) NXP Semiconductors – Schottky barrier diode

BAS40L, SBAS40L
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Power Dissipation
@ T_A = 25°C
Derate above 25°C
Operating Junction and Storage
Temperature Range
Symbol
V_R
P_F
T_J, T_stg
Value
40
225
1.8
−55 to +150
Unit
V
mW
mW/°C
°C
Forward Continuous Current
Forward Surge Current
tv1s
t v 10 ms
Thermal Resistance (Note 1)
Junction−to−Ambient (Note 2)
I_F
I_FSM
R_qJA
120
mA
mA
200
600
508
°C/W
311
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 x 1.0 in pad.
www.onsemi.com
40 VOLTS
SCHOTTKY BARRIER DIODES
SOT−23 (TO−236)
CASE 318
STYLE 8
3
CATHODE
1
ANODE
MARKING DIAGRAM
B1 M G
G
B1 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
BAS40LT1G,
SBAS40LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
BAS40LT3G,
SBAS40LT3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1997
1
October, 2016 − Rev. 11
Publication Order Number:
BAS40LT1/D