BAS40-04LT1G Datasheet, PDF (1/4 Pages) ON Semiconductor – Dual Series Schottky Barrier Diode

BAS40-04LT1G
Dual Series
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
Forward Power Dissipation
@ T_A = 25°C
Derate above 25°C
V_R
40
V
P_F
225
mW
1.8
mW/°C
Operating Junction and Storage Temper- T_J, T_stg −55 to
°C
ature Range
+150
Forward Continuous Current
I_FM
120
mA
Single Forward Current
t v 1 s I_FSM
200
mA
t v 10 ms
600
Thermal Resistance
Junction−to−Ambient
R_qJA
508
(Note 1)
311
(Note 2)
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 x 1.0 in pad.
http://onsemi.com
40 VOLTS
SCHOTTKY BARRIER DIODES
ANODE
1
CATHODE
2
3
CATHODE/ANODE
MARKING
3
DIAGRAM
1
2
SOT−23 (TO−236AB)
CASE 318
STYLE 11
CB MG
G
1
CB = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
BAS40−04LT1G SOT−23 3000/ Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 10
Publication Order Number:
BAS40−04LT1/D