BAS40-04LT1 Datasheet, PDF (1/4 Pages) ON Semiconductor – SCHOTTKY BARRIER DIODES

BAS40−04LT1
Preferred Device
Dual Series
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
Forward Power Dissipation
@ T_A = 25°C
Derate above 25°C
V_R
40
V
P_F
225
mW
1.8
mW/°C
Operating Junction and Storage Temper- T_J, T_stg −55 to
°C
ature Range
+150
Forward Continuous Current
I_FM
120
mA
Single Forward Current
t v 1 s I_FSM
200
mA
t v 10 ms
600
Thermal Resistance
Junction−to−Ambient
R_qJA
508
(Note 1)
311
(Note 2)
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 x 1.0 in pad.
http://onsemi.com
40 VOLTS
SCHOTTKY BARRIER DIODES
ANODE
1
CATHODE
2
3
CATHODE/ANODE
MARKING
3
DIAGRAM
1
2
SOT−23 (TO−236AB)
CASE 318
Style 11
CB D
CB
= Specific Device Code
D
= Date Code
ORDERING INFORMATION
Device
Package
Shipping^†
BAS40−04LT1 SOT−23
3000/ Tape &
Reel
BAS40−04LT1G SOT−23
(Pb−Free)
3000/ Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
March, 2004 − Rev. 8
Publication Order Number:
BAS40−04LT1/D