BAS21SLT1 Datasheet, PDF (1/4 Pages) ON Semiconductor – Dual Series High Voltage Switching Diode

BAS21SLT1
Preferred Device
Dual Series High Voltage
Switching Diode
Features
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: Class 1
ESD Rating − Machine Model: Class B
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Continuous Reverse Voltage
V_R
250
Repetitive Peak Reverse Voltage
V_RRM
250
Peak Forward Current
I_F
225
Peak Forward Surge Current
I_FM(surge)
625
THERMAL CHARACTERISTICS
Vdc
Vdc
mAdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
P_D
225
mW
(Note 1)
T_A = 25°C
Derate above 25°C
1.8
mW/°C
Thermal Resistance,
Junction to Ambient
R_qJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
T_A = 25°C
Derate above 25°C
P_D
300
mW
2.4
mW/°C
Thermal Resistance,
Junction to Ambient
R_qJA
417
°C/W
Junction and Storage
Temperature Range
T_J, T_stg
−55 to
°C
+150
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
ANODE
1
CATHODE
2
3
CATHODE/ANODE
3
1
2
SOT−23
CASE 318
STYLE 11
MARKING DIAGRAM
JT M
JT = Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping^†
BAS21SLT1
SOT−23 3000/Tape & Reel
BAS21SLT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
May, 2004 − Rev. 4
Publication Order Number:
BAS21SLT1/D