BAS21M3T5G Datasheet, PDF (1/4 Pages) ON Semiconductor – High Voltage Switching Diode

BAS21M3T5G
High Voltage Switching
Diode
The BAS21M3T5G device is a spin−off of our popular SOT−23
three−leaded device. It is designed for high voltage switching
applications and is housed in the SOT−723 surface mount package.
This device is ideal for low−power surface mount applications where
board space is at a premium.
Features
• Reduces Board Space
• This is a Halide−Free Device
• This is a Pb−Free Device
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value Unit
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
V_R
250
I_F
200
I_FM(surge) 625
Vdc
mAdc
mAdc
Characteristic
Symbol Max Unit
Total Device Dissipation
FR−5 Board (Note 1)
T_A = 25°C
Derate above 25°C
P_D
mW
265
mW/°C
2.1
Thermal Resistance,
Junction−to−Ambient
R_qJA
470 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) T_A = 25°C
Derate above 25°C
P_D
640
mW
5.1 mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
195 °C/W
Junction and Storage Temperature
T_J, T_stg −55 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
http://onsemi.com
250 V
HIGH VOLTAGE
SWITCHING DIODE
3
CATHODE
1
ANODE
MARKING
DIAGRAM
3
SOT−723
CASE 631AA
AM M
2
STYLE 2
1
1
AM = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping^†
BAS21M3T5G
SOT−723 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
January, 2009 − Rev. 0
Publication Order Number:
BAS21M3/D