BAS21HT1_10 Datasheet, PDF (1/4 Pages) ON Semiconductor – High Voltage Switching Diode

BAS21HT1
High Voltage
Switching Diode
Features
• Pb−Free Packages are Available
http://onsemi.com
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
V_R
V_RRM
I_F
I_FM(surge)
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
250
Vdc
250
Vdc
200
mAdc
625
mAdc
THERMAL CHARACTERISTICS
Symbol
Characteristic
Max
Unit
P_D
Total Device Dissipation FR−5 Board,
(Note 1) T_A = 25°C
Derate above 25°C
200
mW
1.57
mW/°C
R_qJA
Thermal Resistance,
Junction−to−Ambient
635
°C/W
T_J, T_stg Junction and Storage Temperature
Range
−55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 Minimum Pad
HIGH VOLTAGE
SWITCHING DIODE
1
CATHODE
2
ANODE
MARKING
2
DIAGRAM
1
SOD−323
CASE 477
STYLE 1
JS M G
G
JS
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
BAS21HT1
BAS21HT1G
Package
SOD−323
SOD−323
(Pb−Free)
Shipping^†
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
July, 2010 − Rev. 5
Publication Order Number:
BAS21HT1/D