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BAS21HT1 Datasheet, PDF (1/3 Pages) Leshan Radio Company – HIGH VOLTAGE SWITCHING DIODE | |||
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BAS21HT1
Preferred Device
High Voltage
Switching Diode
Features
⢠PbâFree Packages are Available
http://onsemi.com
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
VR
Continuous Reverse Voltage
VRRM Repetitive Peak Reverse Voltage
IF
Peak Forward Current
IFM(surge) Peak Forward Surge Current
THERMAL CHARACTERISTICS
250
Vdc
250
Vdc
200
mAdc
625
mAdc
Symbol
Characteristic
Max
Unit
PD
Total Device Dissipation FRâ5 Board,
(Note 1) TA = 25°C
Derate above 25°C
200
mW
1.57
mW/°C
RqJA
Thermal Resistance,
JunctionâtoâAmbient
635
°C/W
TJ, Tstg Junction and Storage Temperature
Range
â55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FRâ5 Minimum Pad
HIGH VOLTAGE
SWITCHING DIODE
1
CATHODE
2
ANODE
MARKING
2
DIAGRAM
1
SODâ323
CASE 477
STYLE 1
JS M G
G
JS
= Device Code
M
= Date Code*
G
= PbâFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shippingâ
BAS21HT1
BAS21HT1G
SODâ323
SODâ323
(PbâFree)
3000/Tape & Reel
3000/Tape & Reel
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
July, 2006 â Rev. 4
Publication Order Number:
BAS21HT1/D
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