BAS21AHT1G_14 Datasheet, PDF (1/3 Pages) ON Semiconductor – Low Leakage Switching Diode

BAS21AHT1G
Low Leakage
Switching Diode
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
V_R
Continuous Reverse Voltage
V_RRM Repetitive Peak Reverse Voltage
I_F
Peak Forward Current
I_FM(surge) Peak Forward Surge Current
THERMAL CHARACTERISTICS
250
Vdc
250
Vdc
200
mAdc
625
mAdc
Symbol
Characteristic
Max
Unit
P_D
Total Device Dissipation FR−5 Board,
(Note 1) T_A = 25°C
Derate above 25°C
200
mW
1.57
mW/°C
R_qJA
Thermal Resistance,
Junction−to−Ambient
635
°C/W
T_J, T_stg Junction and Storage Temperature
Range
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 Minimum Pad
http://onsemi.com
LOW LEAKAGE
SWITCHING DIODE
1
CATHODE
2
ANODE
MARKING
2
DIAGRAM
1
SOD−323
CASE 477
STYLE 1
AA M G
G
AA
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
BAS21AHT1G
SOD−323 3000/Tape & Reel
(Pb−Free)
NSVBAS21AHT1G SOD−323 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
August, 2014 − Rev. 2
Publication Order Number:
BAS21AHT1/D