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| BAS21AHT1G_10 Datasheet, PDF (1/3 Pages) ON Semiconductor – Low Leakage Switching Diode | |||
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BAS21AHT1G
Low Leakage
Switching Diode
Features
ï· These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
VR
Continuous Reverse Voltage
VRRM Repetitive Peak Reverse Voltage
IF
Peak Forward Current
IFM(surge) Peak Forward Surge Current
THERMAL CHARACTERISTICS
250
Vdc
250
Vdc
200
mAdc
625
mAdc
Symbol
Characteristic
Max
Unit
PD
Total Device Dissipation FR--5 Board,
(Note 1) TA = 25ï°C
Derate above 25ï°C
200
mW
1.57
mW/ï°C
RθJA
Thermal Resistance,
Junction--to--Ambient
635
ï°C/W
TJ, Tstg Junction and Storage Temperature
Range
--55 to +150 ï°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR--5 Minimum Pad
LOW LEAKAGE
SWITCHING DIODE
1
CATHODE
2
ANODE
MARKING
2
DIAGRAM
1
SOD--323
CASE 477
STYLE 1
AA M G
G
AA
= Device Code
M
= Date Code*
G
= Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
BAS21AHT1G
Package
SOD--323
(Pb--Free)
Shippingâ
3000/Tape & Reel
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ï£ Semiconductor Components Industries, LLC, 2010
1
August, 2010 -- Rev. 1
Publication Order Number:
BAS21AHT1/D
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