BAS19LT1G_09 Datasheet, PDF (1/6 Pages) ON Semiconductor – High Voltage Switching Diode

BAS19LT1G, BAS20LT1G,
BAS21LT1G, BAS21DW5T1G
High Voltage
Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Continuous Reverse Voltage
V_R
BAS19
BAS20
BAS21
Repetitive Peak Reverse Voltage
BAS19
BAS20
BAS21
V_RRM
Continuous Forward Current
Peak Forward Surge Current
Junction and Storage Temperature
Range
I_F
I_FM(surge)
T_J, T_stg
Power Dissipation (Note 1)
Electrostatic Discharge
P_D
ESD
Value
120
200
250
120
200
250
200
625
−55 to
+150
385
HM < 500
Unit
Vdc
Vdc
mAdc
mAdc
°C
mW
V
MM < 400
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
HIGH VOLTAGE
SWITCHING DIODE
SOT−23
3
CATHODE
1
ANODE
SC−88A
5
1
CATHODE
ANODE
4
CATHODE
3
ANODE
MARKING DIAGRAMS
3
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 8
Jx M G
G
1
2
3
1
SC−88A (SOT−353)
CASE 419A
5
4
Jx M G
G
12 3
x
= P, R, or S
P
= BAS19LT1
R
= BAS20LT1
S
= BAS21LT1 or BAS21DW5T1
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon the manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 12
Publication Order Number:
BAS19LT1/D