BAS19LT1 Datasheet, PDF (1/6 Pages) ON Semiconductor – High Voltage Switching Diode

BAS19LT1, BAS20LT1,
BAS21LT1, BAS21DW5T1
Preferred Devices
High Voltage
Switching Diode
Device Marking:
• BAS19LT1 = JP
• BAS20LT1 = JR
• BAS21LT1 = JS
• BAS21DW5T1 = JS
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value Unit
Continuous Reverse Voltage
BAS19
BAS20
BAS21
V_R
Vdc
120
200
250
Repetitive Peak Reverse Voltage
BAS19
BAS20
BAS21
V_RRM
Vdc
120
200
250
Continuous Forward Current
I_F
200 mAdc
Peak Forward Surge Current
I_FM(surge) 625 mAdc
Maximum Junction Temperature
T_Jmax
150
°C
Power Dissipation (Note 4)
P_D
385 mW
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
HIGH VOLTAGE
SWITCHING DIODE
SOT−23
3
1
CATHODE
ANODE
SC−88A
5
CATHODE
1
ANODE
4
CATHODE
3
ANODE
MARKING DIAGRAMS
SOT−23 (TO−236)
CASE 318
STYLE 8
Jx M
Jx = Specific Device Code
x = P, R or S
M = Date Code
XX^d
SC−88A (SOT−353)
CASE 419A
XX = Specific Device Code
d _{= Date Code}
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
1
April, 2005 − Rev. 7
Publication Order Number:
BAS19LT1/D