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BAS16WT1G_14 Datasheet, PDF (1/5 Pages) ON Semiconductor – Silicon Switching Diode | |||
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BAS16WT1G
Silicon Switching Diode
Features
⢠S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECâQ101
Qualified and PPAP Capable
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
3
CATHODE
1
ANODE
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10 ms
VR
100
V
IR
200
mA
IFM(surge)
500
mA
Total Power Dissipation,
One Diode Loaded TA = 25°C
Derate above 25°C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
PD
200
mW
1.6
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
â55 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance,
JunctionâtoâAmbient
One Diode Loaded
RqJA
625
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Unit
°C/W
MARKING
DIAGRAM
SCâ70
CASE 419
STYLE 2
A6 MG
G
1
A6
= Specific Device Code
M
= Date Code
G
= PbâFree Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shippingâ
BAS16WT1G
SBAS16WT1G
SCâ70 3000 / Tape & Reel
(PbâFree)
SCâ70 3000 / Tape & Reel
(PbâFree)
NSVBAS16WT3G SCâ70
(PbâFree)
10000 / Tape &
Reel
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
March, 2014â Rev. 11
Publication Order Number:
BAS16WT1/D
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