BAS16WT1G_12 Datasheet, PDF (1/5 Pages) ON Semiconductor – Silicon Switching Diode

BAS16WT1G, SBAS16WT1G
Silicon Switching Diode
Features
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
3
CATHODE
1
ANODE
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10 ms
V_R
75
V
I_R
200
mA
I_FM(surge)
500
mA
Total Power Dissipation,
One Diode Loaded T_A = 25°C
Derate above 25°C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
P_D
200
mW
1.6
mW/°C
Operating and Storage Junction
Temperature Range
T_J, T_stg
−55 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance,
Junction−to−Ambient
One Diode Loaded
R_qJA
625
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Unit
°C/W
MARKING
DIAGRAM
SC−70
CASE 419
STYLE 2
A6 MG
G
1
A6
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
BAS16WT1G
SC−70 3000 / Tape & Reel
(Pb−Free)
SBAS16WT1G SC−70 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
October, 2011− Rev. 9
Publication Order Number:
BAS16WT1/D