BAS16WT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – CASE 419-02, STYLE 2 SC-70/SOT-323

BAS16WT1
Preferred Device
Silicon Switching Diode
Features
• Pb−Free Package is Available
http://onsemi.com
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10 ms
V_R
75
V
I_R
200
mA
I_FM(surge)
500
mA
Total Power Dissipation,
One Diode Loaded T_A = 25°C
Derate above 25°C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
P_D
200
mW
1.6
mW/°C
Operating and Storage Junction
Temperature Range
T_J, T_stg
−55 to
°C
+150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance,
Junction−to−Ambient
One Diode Loaded
R_qJA
625
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Unit
°C/W
3
CATHODE
1
ANODE
MARKING
3
DIAGRAM
1
2
SC−70
CASE 419
STYLE 2
A6D
A6 = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping^†
BAS16WT1
SC−70 3000 / Tape & Reel
BAS16WT1G SC−70 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
1
June, 2005− Rev. 6
Publication Order Number:
BAS16WT1/D