BAS16TT1_04 Datasheet, PDF (1/6 Pages) ON Semiconductor – Silicon Switching Diode

BAS16TT1
Preferred Device
Silicon Switching Diode
Features
• Pb−Free Package is Available*
MAXIMUM RATINGS (T_A = 25°C)
Rating
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10 ms
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR−4 Board (Note 1)
T_A = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2)
T_A = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
Symbol
V_R
I_F
I_FM(surge)
Symbol
P_D
R_qJA
P_D
R_qJA
T_J, T_stg
Max
Unit
75
V
200
mA
500
mA
Max
Unit
225
mW
1.8
mW/°C
555
°C/W
360
mW
2.9
mW/°C
345
°C/W
−55 to
°C
+150
http://onsemi.com
3
CATHODE
1
ANODE
3
2
1
CASE 463
SOT−416
STYLE 2
MARKING DIAGRAM
A6
ORDERING INFORMATION
Device
Package
Shipping^†
BAS16TT1
BAS16TT1G
SOT−416
SOT−416
(Pb−Free)
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
May, 2004 − Rev. 2
Publication Order Number:
BAS16TT1/D