BAS16TT1G_13 Datasheet, PDF (1/5 Pages) ON Semiconductor – Silicon Switching Diode

BAS16TT1G
Silicon Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Max
Unit
Continuous Reverse Voltage
V_R
100
V
Recurrent Peak Forward Current
I_F
200
mA
Peak Forward Surge Current
Pulse Width = 10 ms
I_FM(surge)
500
mA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR−4 Board (Note 1)
T_A = 25°C
Derated above 25°C
P_D
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
R_qJA
555
°C/W
Total Device Dissipation,
FR−4 Board (Note 2)
T_A = 25°C
Derated above 25°C
P_D
360
mW
2.9
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
R_qJA
345
°C/W
Junction and Storage
Temperature Range
T_J, T_stg
−55 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
http://onsemi.com
3
CATHODE
1
ANODE
3
12
XX
M
G
MARKING
DIAGRAM
CASE 463
SOT−416
STYLE 2
A6 ^MG
G
1
= Specific Device Code
= Date Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping^†
BAS16TT1G
SOT−416 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
May, 2013 − Rev. 4
Publication Order Number:
BAS16TT1/D