BAS16TT1 Datasheet, PDF (1/8 Pages) ON Semiconductor – Silicon Switching Diode

BAS16TT1
Preferred Device
Advance Information
Silicon Switching Diode
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Max
Unit
Continuous Reverse Voltage
V_R
75
V
Recurrent Peak Forward Current
I_F
200
mA
Peak Forward Surge Current
Pulse Width = 10 ms
I_FM(surge)
500
mA
THERMAL CHARACTERISTICS
Characteristic
Total Power Dissipation, ⁽¹⁾
T_A = 25°C
Operating and Storage Junction
Temperature Range
Symbol
Max
Unit
P_D
150
mW
T_J, T_stg
–55 to
°C
+150
Thermal Resistance,
Junction to Ambient
R_θJA
833
°C/W
(1) Device mounted on FR–4 glass epoxy printed circuit board using the
minimum recommended footpad.
http://onsemi.com
3
CATHODE
1
ANODE
3
2
1
CASE 463
SOT–416/SC–75
STYLE 2
DEVICE MARKING
A6
ORDERING INFORMATION
Device
Package
Shipping
BAS16TT1
SOT–416 3000 / Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2000
1
March, 2000 – Rev. 0
Publication Order Number:
BAS16TT1/D