BAS16M3T5G Datasheet, PDF (1/4 Pages) ON Semiconductor – Switching Diode

BAS16M3T5G
Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
V_R
75
Vdc
Peak Forward Current
I_F
200
mAdc
Peak Forward Surge Current
I_FM(surge)
500
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR−4 Board (Note 1)
T_A = 25°C
Derated above 25°C
P_D
260
mW
2.0
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
R_qJA
490
°C/W
Total Device Dissipation,
FR−4 Board (Note 2)
T_A = 25°C
Derated above 25°C
P_D
580
mW
4.6
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
R_qJA
215
°C/W
Junction and Storage
Temperature Range
T_J, T_stg
−55 to
°C
+150
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
http://onsemi.com
3
CATHODE
1
ANODE
MARKING
DIAGRAM
3
SOT−723
CASE 631AA
VM
2
1
STYLE 2
V
= Specific Device Code
M
= Date Code
ORDERING INFORMATION
Device
Package
Shipping^†
BAS16M3T5G
SOT−723
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
August, 2011 − Rev. 2
Publication Order Number:
BAS16M3/D