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BAS16LT1G Datasheet, PDF (1/4 Pages) ON Semiconductor – Switching Diode | |||
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BAS16LT1G
Switching Diode
Features
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Continuous Reverse Voltage
VR
75
Vdc
Peak Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FRâ 5 Board
PD
(Note 1)
TA = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance,
JunctionâtoâAmbient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD
300
mW
2.4
mW/°C
Thermal Resistance,
JunctionâtoâAmbient
RqJA
417
Junction and Storage Temperature
TJ, Tstg â55 to +150
1. FRâ5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
°C/W
°C
http://onsemi.com
3
CATHODE
1
ANODE
3
1
2
SOTâ23
CASE 318
STYLE 8
MARKING
DIAGRAM
A6 M G
G
1
A6 = Specific Device Code
M = Date Code*
G = PbâFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shippingâ
BAS16LT1G
SOTâ23 3000/Tape & Reel
(PbâFree)
BAS16LT3G
SOTâ23 10000/Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 â Rev. 8
Publication Order Number:
BAS16LT1/D
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