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BAS16HT1_10 Datasheet, PDF (1/4 Pages) ON Semiconductor – Switching Diode
BAS16HT1
Switching Diode
Features
 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
VR
75
IF
200
IFM(surge)
500
Vdc
mAdc
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Total Device Dissipation FR-5 Board
(Note 1)
TA = 25C
Derate above 25C
PD
200
mW
1.57 mW/C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
RθJA
TJ, Tstg
635
--55 to
150
C/W
C
1. FR-4 Minimum Pad.
http://onsemi.com
1
CATHODE
2
ANODE
2
1
SOD--323
CASE 477
STYLE 1
MARKING DIAGRAM
A6 M
A6 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
BAS16HT1
SOD--323 3000/Tape & Reel
BAS16HT1G
SOD--323 3000/Tape & Reel
(Pb--Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
1
August, 2010 -- Rev. 5
Publication Order Number:
BAS16HT1/D