BAS116TT1G Datasheet, PDF (1/3 Pages) ON Semiconductor – Switching Diode

BAS116TT1G
Switching Diode
Features
• Low Leakage Current Applications
• Medium Speed Switching Times
• Available in 8 mm Tape and Reel
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Max
Unit
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
V_R
75
V
I_F
200
mA
I_FM(surge)
500
mA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR−4 Board (Note 1)
T_A = 25°C
Derated above 25°C
P_D
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
R_qJA
555
°C/W
Total Device Dissipation,
FR−4 Board (Note 2)
T_A = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
P_D
R_qJA
360
mW
2.9
mW/°C
345
°C/W
Junction and Storage
Temperature Range
T_J, T_stg
−55 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
http://onsemi.com
3
CATHODE
1
ANODE
3
12
AE
M
G
MARKING
DIAGRAM
CASE 463
SOT−416
STYLE 2
AE MG
G
1
= Specific Device Code
= Date Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping^†
BAS116TT1G SOT−416 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
September, 2011 − Rev. 1
Publication Order Number:
BAS116TT1/D