BAS116LT1_04 Datasheet, PDF (1/4 Pages) ON Semiconductor – Switching Diod

BAS116LT1
Preferred Device
Switching Diode
This switching diode has the following features:
• Low Leakage Current Applications
• Medium Speed Switching Times
• Available in 8 mm Tape and Reel
Use BAS116LT1 to order the 7 inch/3,000 unit reel
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol Value Unit
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
V_R
75
I_F
200
I_FM(surge) 500
Vdc
mAdc
mAdc
Characteristic
Symbol Max Unit
Total Device Dissipation FR−5 Board (Note 1)
P_D
T_A = 25°C
Derate above 25°C
225
mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2) T_A = 25°C
Derate above 25°C
R_qJA
P_D
556 °C/W
300
mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R_qJA
T_J, T_stg
417
−55 to
+150
°C/W
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
http://onsemi.com
3
CATHODE
1
ANODE
MARKING
DIAGRAM
JV M
SOT−23 (TO−236)
CASE 318
STYLE 8
JV
= Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping^†
BAS116LT1
SOT−23 3000 / Tape & Reel
BAS116LT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
April, 2004 − Rev. 4
Publication Order Number:
Devicenumber/D