BAS116LT1G Datasheet, PDF (1/3 Pages) ON Semiconductor – Switching Diode

BAS116LT1G
Switching Diode
Features
• Low Leakage Current Applications
• Medium Speed Switching Times
• Available in 8 mm Tape and Reel
Use BAS116LT1 to order the 7 inch/3,000 unit reel
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value Unit
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
V_R
75
I_F
200
I_FM(surge) 500
Vdc
mAdc
mAdc
Characteristic
Symbol Max Unit
Total Device Dissipation FR−5 Board (Note 1)
P_D
T_A = 25°C
Derate above 25°C
225
mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2) T_A = 25°C
Derate above 25°C
R_qJA
P_D
556 °C/W
300
mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R_qJA
T_J, T_stg
417
−55 to
+150
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
http://onsemi.com
3
CATHODE
1
ANODE
3
1
2
SOT−23 (TO−236AB)
CASE 318
STYLE 8
MARKING DIAGRAM
JV M G
G
JV = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
BAS116LT1G SOT−23
(Pb−Free)
3000/Tape & Reel
BAS116LT3G SOT−23 10000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 6
Publication Order Number:
BAS116LT1/D