BAS116LT1 Datasheet, PDF (1/4 Pages) ON Semiconductor – Switching Diode

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAS116LT1/D
Switching Diode
This switching diode has the following features:
• Low Leakage Current Applications
• Medium Speed Switching Times
• Available in 8 mm Tape and Reel
Use BAS116LT1 to order the 7 inch/3,000 unit reel
Use BAS116LT3 to order the 13 inch/10,000 unit reel
3
CATHODE
1
ANODE
MAXIMUM RATINGS
Rating
Symbol
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
VR
IF
IFM(surge)
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate(2) TA = 25°C
Derate above 25°C
R_qJA
PD
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R_qJA
TJ, Tstg
BAS116LT1 = JV
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 µAdc)
Reverse Voltage Leakage Current (VR = 75 Vdc)
Reverse Voltage Leakage Current (VR = 75 Vdc, TJ = 150°C)
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Voltage (IF = 50 mAdc)
Forward Voltage (IF = 150 mAdc)
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1)
  1. FR– 5 = 1.0 0.75 0.062 in.
  2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
V(BR)
IR
VF
CD
trr
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
BAS116LT1
Motorola Preferred Device
3
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
Value
75
200
500
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Min
Max
Unit
75
—
Vdc
—
5.0
nAdc
—
80
—
900
mV
—
1000
—
1100
—
1250
—
2.0
pF
—
3.0
µs
1