BAL99LT1G_09 Datasheet, PDF (1/3 Pages) ON Semiconductor – Switching Diode

BAL99LT1G
Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
V_R
70
Vdc
Peak Forward Current
I_F
100
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board P_D
(Note 1), T_A = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T_A = 25°C
Derate above 25°C
R_qJA
P_D
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
417
Junction and Storage Temperature T_J, T_stg −55 to +150
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in 99.5% alumina.
°C/W
°C
ANODE
3
CATHODE
2
3
1
2
SOT−23
CASE 318
STYLE 18
MARKING DIAGRAM
JF MG
G
JF Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
BAL99LT1G
Package
SOT−23
(Pb−Free)
Shipping^†
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 5
Publication Order Number:
BAL99LT1/D