BAL99LT1G Datasheet, PDF (1/4 Pages) ON Semiconductor – Switching Diode

BAL99LT1G
Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
V_R
70
Vdc
Peak Forward Current
I_F
100
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board P_D
(Note 1), T_A = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T_A = 25°C
Derate above 25°C
R_qJA
P_D
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
417
Junction and Storage Temperature T_J, T_stg −55 to +150
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in 99.5% alumina.
°C/W
°C
ANODE
3
CATHODE
2
3
1
2
SOT−23
CASE 318
STYLE 18
MARKING DIAGRAM
JF MG
G
JF Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
BAL99LT1G
Package
SOT−23
(Pb−Free)
Shipping^†
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
1
October, 2016 − Rev. 7
Publication Order Number:
BAL99LT1/D