ATP104 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1406A
ATP104
P-Channel Power MOSFET
–30V, –75A, _{8.4mΩ, Single ATPAK}
http://onsemi.com
Features
• _{Low ON-resistance}
• _{Slim package}
• _{Halogen free compliance}
• _{Large current}
• _{4.5V drive}
• _{Protection diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note :*1 VDD=15V, L=100μH, IAV=38A
*2 L≤100μH, Single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
--30
V
±20
V
--75
A
--225
A
60
W
150
°C
--55 to +150
°C
130 mJ
38
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
1.5
0.4
ATP104-TL-H
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
TL
Marking
ATP104
LOT No.
2
1
3
0.8
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
Electrical Connection
4,2
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/20409PA MSIM TC-00001830 No. A1406-1/7