AML2002 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor LED Back Light

Ordering number : ENA1837A
AML2002
Bipolar Transistor
200V, 0.7A, Low VCE(sat), NPN Single TO-126ML
http://onsemi.com
Features
• _{VCEO=200V, IC=0.7A}
• _{Low collector-to-emitter saturation voltage VCE(sat)=0.125V(typ.)@IC=0.35A}
• _{High-speed switching tf=70ns(typ.)@IC=0.3A}
• _{The plastic-covered heat sink eliminates the need for an insulator when mounting the AML2002}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25°C
Conditions
Ratings
Unit
220
V
200
V
8
V
0.7
A
2
A
1.5
W
10
W
150
°C
-55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7516A-002
8.0
4.0
1.0 ^3.6 1.0
3.3
AML2002
Product & Package Information
• Package
: TO-126ML
• JEITA, JEDEC
: TO-126
• Minimum Packing Quantity : 200 pcs./bag
Marking
Electrical Connection
2
1.6
0.8
0.8
0.7
0.75
L2002
LOT No.
3
1
123
2.4
4.8
1 : Emitter
2 : Collector
3 : Base
TO-126ML
Semiconductor Components Industries, LLC, 2013
September, 2013
82912 TKIM/12611CB TKIM TC-00002562 No. A1837-1/7