5LN01SP-AC Datasheet, PDF (1/4 Pages) ON Semiconductor – Ultrahigh-Speed Switching Applications

5LN01SP
Ordering number : ENN6559
N-Channel Silicon MOSFET
5LN01SP Ultrahigh-Speed Switching Applications
Features
• _{Low ON-resistance.}
• Ultrahigh-speed switching.
• 2.5V drive.
Package Dimensions
unit : mm
2180
[5LN01SP]
4.0
2.2
0.4
0.5
0.4
0.4
Specifications
Absolute Maximum Ratings at Ta=25°C
123
1.3
1.3
3.0
3.8nom
1 : Source
2 : Drain
3 : Gate
SANYO : SPA
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Ratings
Unit
50
V
±10
V
0.1
A
0.4
A
0.25
W
150
°C
--55 to +150
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : YB
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
ID=1mA, VGS=0
VDS=50V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=100µA
VDS=10V, ID=50mA
min
50
0.4
0.13
Ratings
Unit
typ
max
V
10
µA
±10
µA
1.3
V
0.18
S
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
5LN01SP/D