5LN01C Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

Ordering number : EN6555C
5LN01C
N-Channel Small Signal MOSFET
50V, 0.1A, 7.8Ω, Single CP
http://onsemi.com
Features
• _{Low ON-resistance}
• _{Ultrahigh-speed switching}
• _{2.5V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW≤10μs, duty cycle≤1%
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
Unit
50
V
±10
V
0.1
A
0.4
A
0.25
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7013A-013
2.9
0.1
5LN01C-TB-E
3
5LN01C-TB-H
1
0.95
2
0.4
1 : Gate
2 : Source
3 : Drain
CP
Ordering & Package Information
Device
Package
Shipping
5LN01C-TB-E
CP
SC-59, TO-236,
SOT-23, TO-236AB
3,000pcs./
reel
memo
Pb-Free
5LN01C-TB-H
CP
SC-59, TO-236,
SOT-23, TO-236AB
3,000pcs./
reel
Pb-Free
and
Halogen Free
Packing Type: TB
Marking
YB
TB
Electrical Connection
3
1
2
Semiconductor Components Industries, LLC, 2013
June, 2013
62613 TKIM TC-00002951/62712 TKIM/33106PE MSIM TB-00002196/71400 TSIM TA-2050 No.6555-1/6