55GN01MA Datasheet, PDF (1/8 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications

Ordering number : ENA1114A
55GN01MA
RF Transistor
10V, 70mA, fT=5.5GHz, NPN Single MCP
http://onsemi.com
Features
• _{High cut-off frequency : fT=5.5GHz typ}
• _{High gain : ⏐S21e⏐}²_{=10dB typ (f=1GHz)}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm²Ã—0.8mm)
Ratings
Unit
20
V
10
V
3
V
70 mA
400 mW
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7023A-009
2.0
0.15
3
55GN01MA-TL-E
0 to 0.08
1
2
0.65
0.3
1 : Base
2 : Emitter
3 : Collector
MCP
Product & Package Information
• Package
: MCP
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
TL
Electrical Connection
3
1
LOT No.
ZD
LOT No.
2
Semiconductor Components Industries, LLC, 2013
August, 2013
71112 TKIM/O2908AB MSIM TC-00001677 No. A1114-1/8