50C02CH_16 Datasheet, PDF (1/5 Pages) ON Semiconductor – Bipolar Transistor

50C02CH
Bipolar Transistor
50V, 0.5A, Low VCE(sat), NPN Single
Features
• Large Current Capacitance
• Low Collector to Emitter Saturation Voltage (Resistance):
RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA]
• Ultrasmall Package Facilitates Miniaturization in End Products
• Small ON-Resistance (Ron)
Typical Applications
• Low-Frequency Amplifier
• High Speed Switching
• Small Motor Drive
• Muting Circuit
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2)
Parameter
Symbol
Value
Unit
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
5
V
Collector Current
IC
500 mA
Collector Current (Pulse)
ICP
Collector Dissipation (Note 2)
PC
Junction Temperature
Tj
1.0
A
700 mW
150 °C
Storage Temperature
Tstg
−55 to +150 °C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
Note 2 : Surface mounted on ceramic substrate(600mm² × 0.8mm)
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ELECTRICAL CONNECTION
3
1 : Base
1
2 : Emitter
3 : Collector
2
3
1
2 CPH3
MARKING
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
April 2016 - Rev. 2
Publication Order Number :
50C02CH/D