50A02CH_16 Datasheet, PDF (1/5 Pages) ON Semiconductor – Bipolar Transistor

50A02CH
Bipolar Transistor
−50V, −0.5A, Low VCE(sat), PNP Single
Features
• High Collector Current Capability
• Low Collector to Emitter Saturation Voltage (Resistance):
RCE(sat) typ=210mΩ [IC=0.5A, IB=50mA]
• Low ON-Resistance (Ron)
• Pb-Free, Halogen Free and RoHS compliance
Typical Applications
• Low-Frequency Amplifier
• High Speed Switching
• Small Motor Drive
• Muting Circuit
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2)
Parameter
Symbol
Value
Unit
Collector to Base Voltage
Collector to Emitter Voltage
VCBO
VCEO
−50
V
−50
V
Emitter to Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation (Note 2)
Junction Temperature
VEBO
IC
ICP
PC
Tj
−5
V
−500 mA
−1.0
A
700 mW
150 °C
Storage Temperature
Tstg
−55 to +150 °C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
Note 2 : Surface mounted on ceramic substrate(600mm² × 0.8mm)
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ELECTRICAL CONNECTION
3
1 : Base
1
2 : Emitter
3 : Collector
2
3
1
2 CPH3
MARKING
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
April 2016 - Rev. 2
Publication Order Number :
50A02CH/D