3LP01C Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

Ordering number : EN6645D
3LP01C
P-Channel Small Signal MOSFET
–30V, –0.1A, _{10.4Ω, Single CP}
http://onsemi.com
Features
• _{Low ON-resistance}
• _{High-speed switching}
• _{2.5V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
Unit
--30
V
±10
V
--0.1
A
--0.4
A
0.25
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Ordering & Package Information
unit : mm (typ)
Device
Package
Shipping
memo
7013A-013
2.9
3
0.1
3LP01C-TB-E
3LP01C-TB-H
3LP01C-TB-E
3LP01C-TB-H
CP
SC-59,TO-236,
SOT-23,TO-236AB
CP
SC-59,TO-236,
SOT-23,TO-236AB
3,000
pcs./reel
3,000
pcs./reel
Pb-Free
Pb-Free
and
Halogen Free
1
0.95
2
0.4
1 : Gate
2 : Source
3 : Drain
CP
Packing Type: TL
TB
Marking
XA
Electrical Connection
3
1
2
Semiconductor Components Industries, LLC, 2013
June, 2013
62613 TKIM TC-00002944/62712 TKIM/32509 MSIM TC-00001903/72606/ No.6645-1/6
33006PE MSIM TB-00002203/90100 TSIM TA-1982