3LN01S Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

Ordering number : EN6957C
3LN01S
N-Channel Small Signal MOSFET
30V, 0.15A, 3.7Ω, Single SMCP
http://onsemi.com
Features
• _{Low ON-resistance}
• _{Ultrahigh-speed switching}
• _{2.5V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
Unit
30
V
±10
V
0.15
A
0.6
A
0.15
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7013A-013
1.6
0.4
0.8
0.4
3LN01S-TL-E
Ordering & Package Information
Device
Package
Shipping
3LN01S-TL-E
SMCP
SC-75, SOT-416
3,000
pcs./reel
Packing Type: TL
Marking
memo
Pb-Free
1
2
3
0.1 MIN
1 : Gate
2 : Source
3 : Drain
SMCP
YA
TL
Electrical Connection
3
1
2
Semiconductor Components Industries, LLC, 2013
June, 2013
61213 TKIM TC-00002937/62712 TKIM/41006PE MSIM TB-00002189/60801 TSIM TA-1922 No.6957-1/6