369AA-01 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 30V, 7 m, 89A, Single N−Channel SO8FL

NVMFS4841N
Power MOSFET
30V, 7 mW, 89A, Single N−Channel SO8FL
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R_DS(on) to Minimize Conduction Losses
• Low Q_G and Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified
• These are Pb−Free Devices*
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
30
V
Gate−to−Source Voltage
V_GS
"20 V
Continuous Drain Cur-
T_mb = 25°C
I_D
rent R_YJ−mb (Notes 1,
2, 3, 4)
Steady ^{Tmb = 100°C}
Power Dissipation
State _{Tmb = 25°C}
P_D
R_YJ−mb (Notes 1, 2, 3)
T_mb = 100°C
89
A
63
112 W
56
Continuous Drain Cur-
T_A = 25°C
I_D
rent R_qJA (Notes 1 &
3, 4)
Steady ^{TA = 100°C}
Power Dissipation
R_qJA (Notes 1, 3)
State _{TA = 25°C}
P_D
T_A = 100°C
16
A
11
3.7
W
1.8
Pulsed Drain Current T_A = 25°C, t_p = 10 ms
I_DM
336
A
Current limited by package
(Note 4)
T_A = 25°C I_DmaxPkg
80
A
Operating Junction and Storage Temperature
T_J, T_stg − 55 to °C
175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T_J = 25°C, V_DD = 24 V, V_GS = 10 V,
I_L(pk) = 19 A, L = 1.0 mH, R_G = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_S
51
A
E_AS
180 mJ
T_L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
Junction−to−Mounting Board (top) − Steady
State (Note 2, 3)
R_YJ−mb
1.3 °C/W
Junction−to−Ambient − Steady State (Note 3) R_qJA
41
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm², 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(ON) MAX
7.0 mW @ 10 V
11.4 mW @ 4.5 V
I_D MAX
89 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
D
S ^V4841
S ^AYWWG
G
G
D
D
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping^†
NVMFS4841NT1G SO−8FL
1500 /
(Pb−Free) Tape & Reel
NVMFS4841NT3G SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and
soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
December, 2010 − Rev. 0
Publication Order Number:
NVMFS4841N/D