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30A02MH Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – Low-Frequency General-Purpose Amplifier Applications
Ordering number : EN7359A
30A02MH
Bipolar Transistor
–30V, –0.7A, Low VCE(sat) PNP Single MCPH3
http://onsemi.com
Applications
• Low-frequency Amplifier, high-speed switching small motor drive
Features
• Large current capacity
• Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ=580mΩ[IC=0.7A, IB=35mA]
• Small ON-resistance (Ron)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (600mm2×0.8mm)
Ratings
Unit
--30
V
--30
V
--5
V
--700 mA
--1.4
A
600 mW
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7019A-004
30A02MH-TL-E
2.0
0.15
30A02MH-TL-H
3
0 to 0.02
1
2
0.65
0.3
Product & Package Information
• Package
: MCPH3
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
AL
TL
Electrical Connection
3
1 : Base
2 : Emitter
3 : Collector
MCPH3
1
2
Semiconductor Components Industries, LLC, 2013
August, 2013
71112 TKIM/O3003 TSIM TA-100125 No.7359-1/6