2SK4177 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA0869A
2SK4177
N-Channel Power MOSFET
1500V, 2A, 13Ω, TO-263-2L
http://onsemi.com
Features
• _{ON-resistance RDS(on)=10Ω(typ.)}
• _{10V drive}
• _{Input capacitance Ciss=380pF (typ.)}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
VGSS
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=50V, L=20mH, IAV=2A (Fig.1)
*2 L≤20mH, single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
1500
V
±20
V
2
A
4
A
80
W
150
°C
--55 to +150
°C
41 mJ
2
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7535-001
10.0
4
1 23
1.27
0.8
2.54
2.54
4.5
1.3
2SK4177-DL-1E
8.0
5.3
0.254
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
Product & Package Information
• Package
: TO-263-2L
• JEITA, JEDEC
: SC-83, TO-263
• Minimum Packing Quantity : 800 pcs./reel
Packing Type: DL
Marking
K4177
LOT No.
DL
Electrical Connection
2, 4
1
TO-263-2L
3
Semiconductor Components Industries, LLC, 2013
July, 2013
D0512 TKIM TC-00002833/31208QB TIIM TC-00001270 No. A0869-1/7